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High-voltage SiC Device Testing

Specifications

Voltage10kV
Current100A
Temperature25°C to 200°C
Variable pulse width for current setting
Optical fiber isolation

Dynamic Testing Capability

  • Turn-on Delay
  • Turn-on Rise
  • Turn-on Energy
  • Turn-off Delay
  • Turn-off Fall
  • Turn-off Energy
  • Diode Reverse Recovery Time
  • Diode Reverse Recovery Energy